This standard specifies a method for verifying the Magnetic Immunity (MI) of Magnetoresistive Random Access Memory (MRAM) in both discrete and embedded random access memory integrated circuit environments. Measurement conditions are defined to evaluate the maximum static magnetic field allowed (μ0Hmax) to meet a prescribed bit error rate (BER), or number of errors per MRAM operation. MRAM operations include "read," "write," "power-off," and "stand-by." The maximum static field, μ0Hmax, is determined as a function of angular orientation with respect to an integrated circuit substrate, or in terms of a worst-case angle guided by theory based on the magnetostatic free energy of an MRAM device. Measurements may be made on packaged MRAM integrated chips and on unpackaged MRAM on substrate wafers alike. Additionally, this standard defines a method for Parametric Characterization to quantify the degradation of the intrinsic error rate (ΔBER) as a continuous function of the applied magnetic field (μ0Happ). To facilitate communication across the semiconductor supply chain, the reporting of results is partitioned into two distinct frameworks. For technology characterization, foundries (e.g., wafer manufacturers) utilize the Parametric Characterization Table to communicate intrinsic technology sensitivity (ΔBER) to Silicon Solutions Providers (e.g., SoC or MCU designers) for use in system-level integration and error-correction overhead planning. For product compliance, Silicon Solutions Providers and Standalone MRAM Providers utilize the MRAM Magnetic Immunity Table to specify the maximum allowable field (μ0Hmax) to End Users (e.g., system integrators in automotive, aerospace, or industrial sectors) to help ensure the finished product meets its target performance specifications.
- Standard Committee
- MS/MagSoc-SC - Magnetics Society Standards Committee
- Status
- Active PAR
- PAR Approval
- 2024-06-06
Working Group Details
- Society
- IEEE Magnetics Society
- Standard Committee
- MS/MagSoc-SC - Magnetics Society Standards Committee
- Working Group
-
P3465 Magnetic Immunity - P3465 Developing Magnetic Immunity Standards for Magnetic Random Access Memory
- IEEE Program Manager
- Malia Zaman
Contact Malia Zaman - Working Group Chair
- Daniel Gopman
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