Inactive-Withdrawn Standard

IEEE 641-1987

IEEE Standard Definitions and Characterization of Metal Nitride Oxide Semiconductor Arrays

This standard has ten sections: an introduction to the MNOS device and memory array; symbols and definitions; references that contain added detail on specific concepts; MNOS arrays and functional operations; MNOS array retention; MNOS array endurance property; reliability considerations for MNOS arrays; the testing methodology necessary to establish the unique properties of the MNOS array for both the consumer and the producer; radiation effects on MNOS arrays; and nonvolatile memory technology, called floating-gate.

Sponsor Committee
Inactive-Withdrawn Standard
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ANSI Approved:

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IEEE Electron Devices Society
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