Inactive-Withdrawn Standard

IEEE 641-1987

IEEE Standard Definitions and Characterization of Metal Nitride Oxide Semiconductor Arrays

This standard has ten sections: an introduction to the MNOS device and memory array; symbols and definitions; references that contain added detail on specific concepts; MNOS arrays and functional operations; MNOS array retention; MNOS array endurance property; reliability considerations for MNOS arrays; the testing methodology necessary to establish the unique properties of the MNOS array for both the consumer and the producer; radiation effects on MNOS arrays; and nonvolatile memory technology, called floating-gate.

Sponsor Committee
EDS -
Status
Inactive-Withdrawn Standard
Board Approval
1987-09-10
History
Withdrawn:
1992-12-03
ANSI Approved:
1988-02-19
Published:
1988-10-07

Working Group Details

Society
IEEE Electron Devices Society
Sponsor Committee
EDS -
No Active Projects
No Active Standards
No Superseded Standards
No Inactive-Withdrawn Standards
No Inactive-Reserved Standards
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