Inactive-Withdrawn Standard

IEEE 1005-1998

IEEE Standard for Definitions, Symbols, and Characterization of Floating Gate Memory Arrays

This standard describes the underlying physics and the operation of floating gate memory arrays, specifically, UV erasable EPROM, byte rewritable E 2 PROMs, and block rewritableflash EEPROMs. In addition, reliability hazards are covered with focus on retention, endurance,and disturb. There are also clauses on the issues of testing floating gate arrays and their hardness to ionizing radiation.

Sponsor Committee
EDS -
Status
Inactive-Withdrawn Standard
Superseding
1005-1991
Board Approval
1998-06-25
History
Withdrawn:
2004-01-16
ANSI Approved:
1999-05-25
Published:
1999-02-09

Working Group Details

Society
IEEE Electron Devices Society
Sponsor Committee
EDS -
No Active Projects
No Active Standards
No Superseded Standards
No Inactive-Withdrawn Standards
No Inactive-Reserved Standards
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