Standard Details
Added in this amendment is a new sub-clause, 4.5 Saturated core secondary winding parameters, to IEEE C62.69(TM)-2016. Test methods, test circuits, measurement procedures, and result treatment to determine the secondary winding resistance and saturated core inductance are given.
| Sponsor Committee | |
| Status |
Active
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| Board Approval |
2017-03-23
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| History |
Published Date:2017-07-14
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Additional Resources Details
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Working Group Details
| Working Group |
LV3.6.2 - 3.6.2 LV Solid State Surge Protective Components WG
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| Working Group Chair |
Michael J Maytum
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| Sponsor Committee | |
| Society | |
| IEEE Program Manager | |
| Existing Standards |
Superseded by C62.59-2019. Avalanche breakdown diodes used for surge protection in systems with voltages equal to or less than 1000 V rms or 1200 V dc are discussed in this standard. The avalanche breakdown diode surge suppressor is a semiconductor diode which can operate in either the forward or reverse direction of its V-I characteristic. This component is a single package, which may be assembled from any combination of series and/or parallel diode chips.
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Applications information on fixed-voltage and gated-thyristor surge protective components (SPCs) is provided. Key device parameters and their sensitivities are explained. Several worked telecommunication circuit design examples are given.
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Test methods and preferred values for metal-oxide varistor (MOV) surge protective components are covered in this standard and have the following main parameter ranges: packaging (leaded disc-type or surface mount), nominal varistor voltage (5 V to 1200 V), 8/20 surge current rating (10 A to 70 kA), and 8/20 clamping voltage (10 V to 3 kV). With appropriate component selection, these components could be used for the overvoltage protection of power and signal systems having continuous ac voltages (2.5 V rms to 750 V rms), steady-state dc voltages (3.3 V to 1000 V), and peak signal feed voltages (3.5 V to 850 V). Information is given on manufacturer type testing used to determine environmental performance and rated values.
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The basic requirements to be met by series connected, solid-state, self-restoring overcurrent protectors (OCPs) for the protection of telecommunication equipment and lines are presented. This standard should be used for the harmonization of existing or future specifications issued by solid-state, self-restoring OCP manufacturers, telecommunication equipment manufacturers, administrations, or network operators.
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Supersedes IEEE C62.35-2010 and IEEE C62.35-2010/Cor1-2018. The basic electrical parameters to be met by silicon PN junction voltage clamping components used for the protection of telecommunications equipment or lines from surges are defined in this standard. It is intended that this standard be used for the harmonization of existing or future specifications issued by PN diode surge protective component manufacturers, telecommunication equipment manufacturers, administrations, or network operators.
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Superseded by C62.59-2019. Avalanche breakdown diodes used for surge protection on systems with voltages equal to or less than 1000 V rms or 1200 V dc are discussed in this standard. The avalanche breakdown diode surge suppressor is a semiconductor diode that can operate in either the forward or reverse direction of its V-I characteristic. This component is a single package, which may be assembled from any combination of series and/or parallel diode chips. This standard contains definitions, service conditions, and a series of test criteria for determining the electrical characteristics and verifying ratings of these avalanche breakdown diodes. If the characteristics differ with the direction of conduction, then each direction of conduction shall be separately specified.
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