Inactive-Withdrawn Standard

IEEE 641-1987

IEEE Standard Definitions and Characterization of Metal Nitride Oxide Semiconductor Arrays

This standard has ten sections: an introduction to the MNOS device and memory array; symbols and definitions; references that contain added detail on specific concepts; MNOS arrays and functional operations; MNOS array retention; MNOS array endurance property; reliability considerations for MNOS arrays; the testing methodology necessary to establish the unique properties of the MNOS array for both the consumer and the producer; radiation effects on MNOS arrays; and nonvolatile memory technology, called floating-gate.

Sponsor Committee
EDS -
Status
Inactive-Withdrawn Standard
Board Approval
1987-09-10
History
Withdrawn:
1992-12-03
ANSI Approved:
1988-02-19
Published:
1988-10-07

Working Group Details

Society
IEEE Electron Devices Society
Sponsor Committee
EDS -

Other Activities From This Working Group

Current projects that have been authorized by the IEEE SA Standards Board to develop a standard.


No Active Projects

Standards approved by the IEEE SA Standards Board that are within the 10-year lifecycle.


No Active Standards

These standards have been replaced with a revised version of the standard, or by a compilation of the original active standard and all its existing amendments, corrigenda, and errata.


No Superseded Standards

These standards have been removed from active status through a ballot where the standard is made inactive as a consensus decision of a balloting group.


No Inactive-Withdrawn Standards

These standards are removed from active status through an administrative process for standards that have not undergone a revision process within 10 years.


No Inactive-Reserved Standards
Subscribe to our Newsletter

Sign up for our monthly newsletter to learn about new developments, including resources, insights and more.